Nanowires strain to generate power
نویسندگان
چکیده
منابع مشابه
Controllable deformation of silicon nanowires with strain up to 24%
Fabricated silicon nanostructures demonstrate mechanical properties unlike their macroscopic counterparts. Here we use a force mediating polymer to controllably and reversibly deform silicon nanowires. This technique is demonstrated on multiple nanowire configurations, which undergo deformation without noticeable macroscopic damage after the polymer is removed. Calculations estimate a maximum o...
متن کاملStrain Rate Induced Amorphization in Metallic Nanowires
Using molecular dynamics simulations with a many-body force field, we studied the deformation of metal alloy nanowires subjected to various strain rates. For all strain rates, the Ni nanowire is elastic up to of 7.5% strain with a yield stress of 5.5 GPa, far above that of bulk Ni. At high strain rates, the crystalline phase transforms continuously to an amorphous phase, exhibiting a dramatic c...
متن کاملStrain In Semiconductor Nanowires And Device Integration
One-dimensional nanowires (NWs) are promising materials for future nanodevices owing to their small dimensions and novel properties. After ten years of materials optimization [1], it is now possible with the help of X-rays and synchrotron radiation to draw some preliminary conclusions about the structural requirements necessary to tune the physical properties of demanding devices in terms of st...
متن کاملCharge separation via strain in silicon nanowires.
Axial charge separation in small diameter, partially strained silicon nanowires is predicted from ab initio calculations with electrons and holes located in different ends of the wires. We show that this effect can be understood from the topologies of near-gap wave functions, and that it is enhanced by quantum confinement. The possibility of utilizing partial strain for charge separation at the...
متن کاملThe microstructure origin of large strain plastically deformed SiC nanowires
Surprisingly large strain plasticity has been demonstrated for ceramic SiC nanowires through in-situ deformation experiments near room temperature. This article reports a detailed electron energy-loss spectroscopy (EELS) study of deformation-induced localized plastic zones in a bent SiC nanowire. Both the “red shift” of the plasmon peak and the characteristic fine structure at Si L-edge absorpt...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materials Today
سال: 2006
ISSN: 1369-7021
DOI: 10.1016/s1369-7021(06)71526-7